3nm

Samsung Foundry has made some changes to its plans concerning its 3 nm-class process technologies that use gate-all-around (GAA) transistors, or what Samsung calls its multi-bridge channel field-effect transistors (MBCFETs). Based on new information direct from Samsung, it would appear that its first version of 3nm, 3GAE (3nm gate-all-around early), is coming to high volume manufacturing a year later than expected, but also it seems to have removed this technology from its public roadmap, suggesting it may be for internal use only. Meanwhile, 3GAE's successor 3GAP (3nm gate-all-around plus) node is still in the roadmap, it is on track for volume manufacturing in 2023. 3GAE on Track for 2022, Maybe Just Not for Everyone At its recent 2021 IP & ASIC Design Ecosystem Conference in China, Samsung...

An AnandTech Interview with TSMC: Dr. Kevin Zhang and Dr. Maria Marced

In the past week, TSMC ran its 2021 Technology Symposium, covering its latest developments in process node technology designed to improve the performance, costs, and capabilities for its customers...

28 by Dr. Ian Cutress on 6/8/2021

TSMC Update: 2nm in Development, 3nm and 4nm on Track for 2022

For TSMC, being the world's largest foundry with nearly 500 customers has its peculiarities. On the one hand, the company can serve almost any client with almost any requirements...

73 by Anton Shilov on 4/26/2021

TSMC to Spend $100B on Fabs and R&D Over Next Three Years: 2nm, Arizona Fab & More

TSMC this week has announced plans to spend $100 billion on new production facilities as well as R&D over the next three years. The world's largest contract maker of...

45 by Anton Shilov on 4/2/2021

Samsung Foundry: New $17 Billion Fab in the USA by Late 2023

Samsung Foundry has filed documents with authorities in Arizona, New York, and Texas seeking to build a leading-edge semiconductor manufacturing facility in the USA. The potential fab near Austin...

35 by Anton Shilov on 2/10/2021

TSMC and Graphcore Prepare for AI Acceleration on 3nm

One of the side announcements made during TSMC’s Technology Symposium was that it already has customers on hand with product development progressing for its future 3nm process node technology...

2 by Dr. Ian Cutress on 8/27/2020

Where are my GAA-FETs? TSMC to Stay with FinFET for 3nm

As we passed that 22nm to 16nm barrier, almost all the major semiconductor fabrication companies on the leading edge transitioned from planar transistors to FinFET transistors. The benefits of...

37 by Dr. Ian Cutress on 8/26/2020

TSMC Details 3nm Process Technology: Full Node Scaling for 2H22 Volume Production

At TSMC’s annual Technology Symposium, the Taiwanese semiconductor manufacturer detailed characteristics of its future 3nm process node as well as laying out a roadmap for 5nm successors in the...

58 by Andrei Frumusanu on 8/24/2020

Intel to use Nanowire/Nanoribbon Transistors in Volume ‘in Five Years’

This year, at the international VLSI conference, Intel’s CTO Mike Mayberry gave one of the plenary presentations, which this year was titled ‘The Future of Compute’. Within the presentation...

14 by Dr. Ian Cutress on 6/22/2020

Samsung Starts Mass Production at V1: A Dedicated EUV Fab for 7nm, 6nm, 5nm, 4nm, 3nm Nodes

Samsung Foundry has started mass production of chips using its 6LPP and 7LPP manufacturing processes at its new V1 fab. The new facility employs one of the industry’s first...

29 by Anton Shilov on 2/20/2020

Intel’s Manufacturing Roadmap from 2019 to 2029: Back Porting, 7nm, 5nm, 3nm, 2nm, and 1.4 nm

One of the interesting disclosures here at the IEEE International Electron Devices Meeting (IEDM) has been around new and upcoming process node technologies. Almost every session so far this...

138 by Dr. Ian Cutress on 12/11/2019

TSMC: 3nm EUV Development Progress Going Well, Early Customers Engaged

Development of new fabrication technologies never stops at leading-edge companies such as TSMC. Therefore, it is not surprising to hear the annoucement that development of TSMC’s 3nm node is...

76 by Anton Shilov on 7/23/2019

Synopsys to Accelerate Samsung’s 7nm Ramp with Yield Explorer Platform

Synopsys has announced an acceleration of development on its yield learning platform designed to speed up ramp up of chips made using Samsung Foundry’s 7LPP (7 nm low power...

16 by Anton Shilov on 7/4/2019

Samsung Announces 3nm GAA MBCFET PDK, Version 0.1

So what comes after 7nm, after 6nm, after 5nm, and after 4nm? That's right: 3nm! At Samsung's Foundry Forum event today, Samsung has announced that the first alpha version...

32 by Dr. Ian Cutress on 5/14/2019

Samsung Foundry Updates: 8LPU Added, EUVL on Track for HVM in 2019

Samsung recently hosted its Samsung Foundry Forum 2018 in Japan, where it made several significant foundry announcements. Besides reiterating plans to start high-volume manufacturing (HVM) using extreme ultraviolet lithography...

29 by Anton Shilov on 9/6/2018

GlobalFoundries Gives 7 nm Capacity Update, Mulls Skipping 5 nm

High-ranking executives of GlobalFoundries this month gave several updates concerning future plans of the contract maker of semiconductors. As it appears, in a bid to provide more tangible advantages...

19 by Anton Shilov on 5/31/2018

Samsung Foundry Roadmap: EUV-Based 7LPP for 2018, 3 nm Incoming

Samsung Foundry this week updated its fabrication technology roadmap, introducing a number of changes and announcing the first details about its 3 nm manufacturing process that is several years...

25 by Anton Shilov on 5/24/2018

Log in

Don't have an account? Sign up now